Übersetzung für "Intrinsic stress" in Deutsch

The project included theoretical and phenomenological analyses of intrinsic and stress induced seismic anisotropy.

As a result of the smaller diameter of the passage of the metal parts, that is to say of the rods 26 and 28, the mechanical intrinsic stress in the ceramic-metal joint is reduced and, since fewer parts need be provided, the overall assembly and storage costs are reduced.

The process of the invention permits chemically induced shrinkage to be reduced, meaning that less intrinsic stress is frozen into the component.

As a result, the intrinsic stress performance of the tubular body is improved markedly without an additional heat treatment, and at the same time, negative influences, of the kind that can occur as a result of a heat treatment, for instance in low-stress annealing, are avoided.

As has been proven in research and development work by calculations, the intrinsic stress performance after the impansion, depending on the degree of impansion, can be reduced to a minimum, and diminishing stress entirely is even possible.

Through the alternating arrangement of layers 24 of quartz and layers 26 of aluminium oxide, it is possible to achieve an intrinsic overall stress which does not lead to the delamination of the layers 15 .

The coating can have an intrinsic compressive stress of the components having the compound between 0.2 GPa and 5 GPa.

In this way, not only is the tube tolerance, especially the ovality, improved in a short time by uniform plastic deformation of the material, but the intrinsic stress performance of the tubular body is improved as well.

As calculations in the context of research and development work have proven, the intrinsic stress performance after impansion, depending on the degree of impansion, is reduced to a minimum, and diminishing stress practically completely is made possible, without requiring a complicated heat treatment, such as a low-stress annealing, for instance at approximately 600° C., and advantages arising from the heat treatment can be avoided.

On releasing the clamping of the product after the separation of the product parts, the displaced product part due to its intrinsic tension/stress again assumes the initial position and shape.

Such structured diaphragms may be used, for example, for stress decoupling, since independence of the sensitivity from intrinsic layer stress parameters may be achieved via the design through suitable diaphragm geometries.

Such design-related measures play, inter alia, a large role for the manufacturing of microphones at high reproducibility and yield, in order to achieve independence from layer parameters which are difficult to control, such as the intrinsic stress.

Thereby intrinsic stress is built up within the crystal in a controlled and purposive manner, wherein said stress favourably influences the above-mentioned properties of deformation and stress.

From investigations by Hearne et al., Applied Physics Letters 74, 356-358 (1999) it is known that during the deposition of GaN on a sapphire substrate an intrinsic tensile stress builds up which increases with the growth.

The processes in the above-described prior art have in common that after growth and cooling-down III-N crystals are obtained which are subjected to strong extrinsic and intrinsic stress, whereby cracks or other material defects can develop, which limit the material quality and the processability towards III-N substrates.

By contrast, in the process according to the present invention an intrinsic—typically compressive—stress, set in a controlled manner, can be purposively controlled during the epitaxial crystal growth, or a curvature can be set at zero or almost at zero such that during the subsequent growth of III-N crystals, for example for the formation of III-N bulk crystals—optionally during a continued growth without interruption of the growth, or within a separate growth process with interruption—, and even still during the final cooling cracks can be avoided.

Furthermore, as a result of a continuously increasing curvature in conventional processes a corresponding increasing intrinsic—typically tensile—stress within the crystal is built up, which optionally already during the further growth, at the latest during the cooling-down from the epitaxial growth temperature, can lead to micro-cracks and even to breaking.

By contrast, in the process according to the present invention an intrinsic—typically compressive—stress can be kept low, such that during the continued growth and even during the cooling cracks can be avoided, that is, crack-free growth of III-N crystals can be attained.

Thereby intrinsic stress is built up within the crystal in a controlled and purposive manner, wherein said stress favourably influences the above-mentioned properties of deformation and stress at continued or subsequent crystal growth.

According to the present invention templates can be produced which under epitaxial crystal growth conditions exhibit no or almost no curvature or a negative curvature and thus only a slight intrinsic stress which proved to be advantageous as starting situation for the further processing.

As soon as the ring has arrived at the groove, the ring can relax and as a result of its intrinsic stress jump into the groove.

Furthermore, as a result of a continuously increasing curvature in conventional processes a corresponding increasing intrinsic—typically tensile—stress within the crystal is built up, which optionally already during the further growth and in particular during further use or respectively further processing of the template, at the latest during the cooling-down from the epitaxial growth temperature, can readily lead to micro-cracks and even to breaking.