Übersetzung für "Avalanche breakdown" in Deutsch

An avalanche breakdown occurs reliably in the bulk material, remote from the surface of the semiconductor region.

The probability of triggering an avalanche breakdown is thus proportional to the leakage current.

If no avalanche breakdown occurs, the MOSFET remains switched off.

The p-n junction 12 - 2 breaks down (avalanche breakdown).

An avalanche breakdown can be prevented in this way, too.

At a higher temperature, a higher doping atom area density is also required on account of the increased field strength in the avalanche breakdown.

The floating gate may be charged electrically by producing an avalanche breakdown at the junction formed by one of the spaced apart regions and the substrate causing the passage of electrons through the insulation into the floating gate.

These gate currents must be taken from a source having a relatively low voltage so that the gate-cathode path of the component is not destroyed by an avalanche breakdown.

Turning-on said second MOSFET during turning-off removes the holes injected by the anode and consequently effectively prevents an avalanche breakdown between the contact region and the n-type emitter layer.

This is necessary in order to prevent an avalanche breakdown at the p-n junction between the contact region 5 and the n-type emitter layer 6.

An avalanche breakdown at this p-n junction would then prevent a turning-off of the device or at least would appreciably slow down the turning-off process.

Instead of the second MOSFET M2, use is made here of a bipolar parasitic p-n-p transistor which is formed from contact region 5, n-type emitter layer 6 and p-type base layer 7 and which is triggered by an intended avalanche breakdown and then absorbs the turning-off current (indicated in FIG.

The second MOSFET M2 has the sole purpose of preventing an avalanche breakdown at the p-n junction from the contact region 5 to the n-type emitter layer 6.

If the voltage at the thyristor increases, then this region enters the state of avalanche breakdown and the breakdown current can fire the thyristor directly or through one or more auxiliary thyristor structures.

If, for example, the second MOSFET M2 is so designed that it carries the entire current with a source-drain voltage of 1 V, and the avalanche breakdown between the contact region 5 and the n-type emitter layer 6 takes place by design at a voltage of 15 V, there remains for the second MOSFET M2 a tolerance range of 1 to 15 V which can readily be maintained, even with a less demanding technology.

If the voltage across the thyristor rises, this region enters avalanche breakdown and the breakdown current can trigger the thyristor directly or via one or more auxiliary thyristor structures.

This compensates for holes and the danger of a dynamic field overshoot, which may result in an avalanche breakdown, is reduced.

But even if all the possibilities of minimizing the stored charge and of limiting the reverse-current peak are utilized, the power loss in the case of such optimized diodes rises to such high values that avalanche breakdown of the diode becomes probable.