Übersetzung für "Erasable memory" in Deutsch

Preferably an erasable and reprogrammable memory is provided in the computing unit.

Due to its positive dielectric anisotropy, it is advantageously suitable for use in an erasable optical memory element.

The non-volatile signature memory is designed for example as an electrically erasable programmable memory (EEPROM).

This memory cell is suitable, for instance, as an electrically erasable SIMOS-memory cell (EEPROM or EAROM application) with a separate erase diffusion zone.

The TPROM tariff memory can either be a throw-away part which is only programmable once, or it can also be an erasable and reusable memory according to the desired arrangement.

The microprocessor 52 is connected to an electrically erasable memory 82 for storing the sensor parameters (e.g. EEPROM) and other varying operating data.

The article entitled "16K EEPROM Relies on Tunneling for Byte-Erasable Program Storage" by Johnson, Kuhn, Renninger and Perelegos, Electronics, Feb. 28, 1980, describes an electrically erasable memory in which the memory cell field is formed of memory cells disposed in matrix form. The cells have memory transistors of the floating gate type with gate connections (control gate of the memory cell) connected together line by line to a control line, as well as selection transistors with gate connections (selection gate of the memory cell) connected together line by line to a selection line.

The number of line erasure processes is limited by the number of available non-erasable check memory cells, so that the ratio between the number of existing memory cells and the number of the unequivocally detectable events is only slightly better than in EPROMS.

A circuit of this type is used for generating a programming and erasing voltage from electrically erasable, non-volatile memory elements (EEPROMs) above a supply voltage of 5 V and in the region of 20 V. A circuit of this type is shown in FIG.

The data memory 15, serving to receive the counter information, is a commercial, electrically programmable and erasable read only memory (EEPROM), such as is known from the publication by W. Soll and J. H. Kirchner, entitled "Digitale Datenspeicher" (Digital Data Memories), 1978, Vogel-Verlag, Wurzburg, pages 160 to 163, and is equipped with control inputs for controlling the reprogramming cycle.

This value is subsequently filed in the electrically erasable memory 84 constructed as an EEPROM and is used for calculating future measured values.

Digest of Technical Papers", pages 152 and 153 there is known an electrically erasable memory matrix (EEPROM) employing storage cells arranged in n rows and m columns.

For realizing the functions "read", "erase" and "write" it is possible with the conventional type of electrically erasable memory matrix to apply the row selection lines, the block lines and the bit lines, with the aid of corresponding decoders, to suitable potentials, with also the address of the memory, of the storage group and of the block having to be selectable, i.e., the aforementioned functions are to be enlarged by the factor 2 in accordance with the address feature "selected" and "nonselected".

Moreover, in the conventional type of electrically erasable memory matrix, the memory cells are connected by columns to each time one throughgoing first and second bit line, and the block line is connected to one block signal source per block, via the source-drain line of a block select transistor whose gate is connected to one of w outputs of a block decoder.

In another embodiment of the invention, part of the erasable non-volatile error memory is copied into an erasable non-volatile memory copy.

For many applications, read-only memory cell arrangements with electrically writeable and electrically erasable read-only memory cells in silicon technology, known as flash EEPROM, are required.

The circuit arrangement according to claim 32, characterized in that the program journal storage device is an erasable read/write memory storage (RAM, EEPROM).

From microtubes of this kind, the described, high-speed erasable digital memory having 100 GHz switching times is to be produced in a parallel fabrication technique.

The correction values themselves there can be stored in the RAM (random access memory) or, in the case of greater deviations from the actually stored values, also in the EEPROM (electrically erasable read only memory).

The data memory is an erasable memory (MEM) which holds data for the service profile assigned to the subscriber.

The data memory is an erasable memory which holds data for a service profile assigned to the subscriber.

The data memory is an erasable memory which holds modifiable data for a service profile assigned to the subscriber.

The data memory is an erasable memory which holds data for a service profile assigned to the subscriber, and the processor controls the input and output means so that the subscriber can modify the service profile data and have the service profile data displayed to him or her.

The control unit 48 includes an erasable permanent memory (EEPROM), in which certain calibration values were stored during a calibration, wherein the calibration values are associated with the sensor output signal values.