Übersetzung für "Erasable programmable read only memory" in Deutsch

The address memory 12 may be an EPROM or some other erasable programmable-read-only-memory.

An EEPROM (Electrical Erasable Programmable Read Only Memory) is particularly suitable as a memory.

Depending on the application of the card, the integrated semiconductor circuit will be constructed as a programmable read-only memory (PROM), as an erasable programmable read-only memory (EPROM) or as a microprocessor.

The nonvolatile memory can preferably be formed of a nonvolatile RAM, but a battery-buffered write/read memory (RAM) or an electrically erasable programmable read-only memory (EEPROM) is also suitable.

Such memory cells are commercially available, for example, in the form of electrically erasable and electrically programmable read-only memory (EEPROM) cells which can be implemented to a high packing density using very large scale integration (VSLI) technology.

The data carrier is formed by an electrically erasable programmable read-only memory which has a large storage capacity.

U.S. Pat. No. 5,259,063 discloses a self-programming circuit in which a processing unit with an electrically erasable and electrically programmable read-only memory (EEPROM), a classification unit in the form of a central processor and an interface unit are provided, the processing unit reading out processing information from the read-only memory, in which circuit input values and/or internal values are processed in the classification unit to give classification results, the input values of the circuit also representing input values of the self-programming processing unit, and in which circuit an interface unit is provided in such a way that from one of the classification results there is generated at least one EEPROM address and at least one EEPROM datum (ED) and the read-only memory (EEPROM) is programmed therewith.

The values WX are in this case stored in a read-only memory (ROM), but there is also the possibility of giving the knowledge memory likewise the form of an electrically erasable and programmable read-only memory (EEPROM) and of providing a further, higher-order classification unit, which changes the knowledge base of the lower-order classification unit.

As can be seen from the embodiment, erasable programmable read-only memory EPROM has a rapid access area Flash-EPROM for the writing and erasing processes caused by rapid writing processes in producing oscillograms.

Portable data carriers typically comprise an integrated semiconductor module which includes a microprocessor with a read only memory (ROM), a random access memory (RAM) in which the operating system or portions of same are stored, and an electrically erasable programmable read only memory (EEPROM).

The method according to claim 1, wherein an EPROM is used as the erasable programmable read-only memory, the EPROM including at least one area that can be excluded from erasing, and communication is initiated between the EPROM and the data processing system using a subprogram stored in the at least one area that can be excluded from erasing.

The working program of the processor computer 10, by which program the desired values are determined or calculated from the desired parameters, is contained in an EPROM, i.e., an erasable programmable read-only memory.

The combination of the transistors 24, 29 equates with the construction of a digital EEPROM (electrically erasable programmable read only memory) cell which, as is known, is used for storing digital information.

The two calibration factors K1, K2 are determined after completion of the mass flow meter in the conventional manner by calibration, i.e., by comparing a known mass flow with flow values measured by the mass flow meter for this known mass flow, and subsequently stored in a memory device contained in the mass flow meter, e.g., an EEPROM (=electrically erasable and programmable read-only memory) or a similar semiconductor memory.

The first sub-component KTi resides protected in an erasable, programmable read-only memory EEPROM, whereas the second sub-component KT'i is transmitted into the security module of the terminal, i.e. into the security card SK, within the framework of the daily terminal logon procedure.

The read only memories used herein may be EPROMs (erasable programmable read only memory) which may be electrically erasable (EEPROM) or erasable with ultraviolent light (UV-EPROM).

A secret cipher (Ki) that is the same for all user terminals is formed of two sub-components (KTi, KT'i) whereof the one sub-component (KTi) is deposited in an erasable, programmable read-only memory (EEPROM).

This further input quantity is a previously generated random number v that is intermediately stored in a register, for example, in an electrically erasable programmable read-only memory EEPROM or in a write-read memory RAM.

The drawing shows an electrical device 1 with a controller 2, an I2C EEPROM (Electrically Erasable Programmable Read Only Memory) 3 and a power supply unit 4, here for instance a DC converter.

The invention relates to an electrical device with a controller, an I2C EEPROM (Electrically Erasable Programmable Read Only Memory), a power supply unit, which is electrically connected to the controller and the I2C EEPROM, a clock line and a data line, which both connect the controller to the I2C EEPROM, a first resistor connected to the data line, a second resistor connected to the clock line, with in each case the other respective terminal of the two resistors being disposed on the electrical connection between the power supply unit and the I2C EEPROM.