Übersetzung für "Complementary effect" in Deutsch

Complementary and effect colours guarantee your company clothing the attention it deserves.

The active substances in Pravafenix, pravastatin and fenofibrate, work in different ways and their actions have a complementary effect.

The invention relates further to a method of producing a large-scale integrated complementary MOS field-effect transistor circuit (CMOS circuit).

In a second alignment or when viewing from a different viewing direction, the complementary effect occurs.

The active substances in Cholib, fenofibrate and simvastatin, work in different ways and their actions have a complementary effect.

There's a complementary effect and the patient goes from... From stable to unstable, and becomes... suspended in the middle.

The inverter stage I5 is again constructed by two complementary field effect transistors P7 and N15, whereby a first terminal of P7 and N15 form the output of the inverter stage I5 and the gate terminals of both field effect transistors represent the input of the fifth inverter stage I5 that is to be connected, first, to the gate terminals of the n-channel field effect transistor N3, the n-channel field effect transistor N9 and the n-channel field effect transistor N2 and, second, to the output of the fifth inverter stage I3.

According to the basic idea of the invention, and in distinction to the prior art, the input signal is not applied to the gate electrodes which are connected to one another, but separately via a driver stage which serves to produce two driver signals of the same sign, which are simultaneously applied to each time one gate electrode of the complementary field-effect transistors, and each time raise the source-gate voltage of one of the two field-effect transistors above its threshold value.

The invention relates to a method for the manufacture of gate electrodes formed of double layers of metal silicides having a high melting point, and doped polycrystalline silicides (polycide), in particular for integrated complementary MOS-field effect transistor circuits (CMOS) wherein the manufacture of the source/drain zones is provided through ion implantation after the production of the gate electrode pursuant to use of the gate electrode as an implantation mask.

Prior Art In known methods for manufacturing LSI complementary MOS field effect transistors circuits (CMOS circuits), multiple implantations according to various techniques, which are very involved, are employed for defining the different transistor threshold voltages.

However, by following the principles of the invention one can also design the process sequence in such a manner that complementary field effect transistor circuits without additional switched capacitors can be produced.

For switching a “switched capacitor”, an insulated gate field effect transistor (IGFET) is usually employed, and in particular two complementary field effect transistors (CMOS field effect transistors) connected in parallel to each other are employed.

The balancing accuracy with respect to amplification and time behavior between the analog and digital signal processing with complementary effect must be extremely high to avoid distortions.

Complementary MOS field effect transistor circuits are produced in silicon gate technology, with the method steps up to the structuring of the gate electrode being executed in a known manner.