Translation of "Hoch dotiert" in English

One of the silicon wafer surfaces is highly doped with an impurity p-conductivity.

This further contact layer 11 is highly n-conductively doped in both embodiments.

The main contact layer 7 and the lateral contact layer 9 are respectively highly doped.

Since both zones are normally highly doped, this p-n junction could be destroyed.

The surfaces to be bonded to one another (wafer bonding) should be very highly doped.

Underneath the contact areas the silicon material is highly doped.

In a preferred configuration, the contact layers 6 and 7 are embodied in a highly-doped fashion.

InP:Zn), and thereupon a third partial contact layer 27, which is doped high.

In order to obtain very low contact resistance, beforehand high-doping takes place under the contact points.

For the sake of better contacting, the emitter layers are preferably highly enough doped to form an ohmic metal-to-semiconductor contact.

The carrier 2 made of silicon is p-doped, the layer 11 highly p-doped.

If modulation must be applied to all axes, then we must also pay close attention to the level of their appropriations.

A passivated semiconductor pn junction is provided which has a high electric strength, one area being heavily doped and being very thin, in particular for radiation detectors.

The thermal stability of the mask and thus the output obtainable can be advantageously increased because the doped layer is highly boron-doped.

In the described exemplary embodiment, the substrate 1 and the lateral region layers 40, 41 are n-conductively doped, the intermediate layer 3, the tuning layer 7 and the cover layer 8 are p-conductively doped, and the contact layer 9 for the low-impedance transition from the semiconductor material to the metal of the contact is highly p-conductively doped.

This contact stripe 10 is so highly doped that it reduces the contact resistance in the region of the active stripe 3, 3'.

This further contact layer 11 is sufficiently highly doped, so that this contact layer 11 has sufficiently high conductivity and compensates for the great distance of the laterally applied contact from the stripe-shaped layer structure.

The resistances R4, R5 and R8 serving for current regulation are constituted as integrated resistors produced by ion implantation and are preferably doped through different levels in the implantation, so that different temperature coefficients referring to their resistance values result.

Subsequently, substrate 1 is highly doped from the front with an impurity causing a P+ -conductivity.

If the silicon 15 is heavily doped, the underlying base contact area 16 will become sufficiently conductive as a result of outdiffusion from polysilicon 15 during subsequent high temperature processing.

An important feature in this case is that the bulk region is doped highly enough to assure a low-impedance connection between the front side of the wafer and the rear side of the wafer.

In particular, the upper ohmic contact layer 6 is so highly doped that the semiconductor material forms a good low-impedance contact to a metallization to be applied.

What is important in this case is that the source region 3, which is formed essentially of the semiconductor body 1, be adequately highly doped, in order to assure a low-impedance connection with the rear side 10 of the wafer.

In order to avoid leakage currents due to punch-through given a short channel length, the channel layer should be highly doped.

The buried layer and the connection zones are very heavily doped in order to satisfy the requirements of a very high conductance.

The buried layer, in this configuration, is connected to the terminal pad via a connection zone, which is doped as heavily as possible for reasons of good conductivity.

The word lines 40 are composed of a conductive material, for example of a semiconductor material, which is highly doped, for example of polycrystalline silicon.