Übersetzung für "Darüberliegende schicht" in Englisch

The overlying layer consists of glucose oxidase that had been immobilized on a support made of nylon net.

When the stress on the layer above exceeds the inter-layer binding strength, it moves faster than the layer below.

Next, utilizing conventional lift-off removal techniques, the remaining portions of the resist mask 12A are completely removed by suitable solvents or etchants which also carry away the overlying magnesium oxide coating to leave behind the magnesium oxide segments 14A forming a dry etch mask 15 on the surface of the metal film 11.

It is important that the first layer located on the transparent foil scatters light considerably less in a wet state than the overlying second layer.

In one particularly preferred embodiment, yet another overlying layer, which predominantly consists of SiO2, is present above the coating which contains BN crystals.

The layer 7 above it is an SiO 2 layer with a low refractive index and a thickness D 7 of about 90 nm, while the top layer 6, which is located above it, of the multilayer optical system 3 has a similarly high refractive index, consists of TiO 2 and has a thickness D 6 of about 60 nm.

This means that an RLP frame is released to the layer directly on top thereof only when said frame has been received completely and when said frame is the following one in the sequence.

Amorphous fibres containing Si, B and N according to claim 1, further comprising an additional overlying layer consisting essentially of SiO2 above the coating.

In this case, the planarizing layer is formed by a PECVD silicon oxide layer 12 and an SOG layer 13 located above it. After the SOG has been applied, a conventional etching back step is performed.

However, a prerequisite with the sequential pouring process is that the respectively lower layer has not yet undergone a phase separation at the time that the layer disposed thereabove is poured on.

If the material used for the optical coupling layer is not suitable for direct immobilization, it may be provided with a coating of some other material, e.g., a suitable kind of glass, which will lend itself to the chemical immobilization of indicator molecules.

Titanium layer 8 presents the added advantage of serving as a good adhesive base for the overlying copper layer 9.

Vulcanized together with the layer 6 is another, superposed layer 7 made of a purified elastomeric material, which in the vicinity of its edges is vulcanized on the conductor disk or circuit board 4 and on the contacts 5 disposed thereon.

The diffusion barrier layer 15 prevents diffusion of copper into the memory components 11 and into the dielectric layer 17 above, i.e. the intermetal dielectric, in the region of the memory cell array.

However, outer coating 13 located above it is constructed differently in this embodiment in as far as it is a multi-layer coating.

The reason is that water from the interior can reach the outside only slowly by diffusion through the layer above it.

It is important that the first layer located on the transparent foil scatters light considerably less than the overlying second layer.

An important feature of the detection film that is preferred here for the preferred embodiment of an analytical test element is that the first layer lying on the transparent foil scatters light considerably less than the overlying second layer.

In a modification of this embodiment one can dispense with applying layer 8, or apply any desired layer instead of absorbent layer 8, if the markings are not incorporated by removing reflective layer 7 but by blackening layer 6 located thereabove, as described above.

In addition to the elements of the active layer located above, it protects the circuit parts located underneath.

The primer layer permanently and fixedly anchors the layer present on top and sensitive to IR radiation to the metallic substrate.

A blanket layer of magnesium oxide is then deposited, as by evaporation, over the retained resist and exposed metal layer, followed by removal of remainder of the resist together with its overcoating of magnesium oxide in a suitable solvent.

The structure includes a monocrystalline silicon substrate 60 which may be of any suitable crystallographic orientation, a N+ layer 61 thereover, a P layer 62 over the N+ layer, and a second N+ layer 63 over the P layer.

It is advantageous if over the supporting elements and the layer of protective material, as well as over the layer of drainage material over that, an additional seal coat sloping over the seepage collecting zones is disposed, with a drainage layer over it, which is connected by vertical drainpipes to the seepage collecting zones and to the system for removing the seepage.

The photographic layers above and below these layers should, if possible, also have a pH value of 7 because a lower pH value in adjacent layers may have a deleterious effect on the antistatic properties of the layer containing the polymer particles used according to the present invention.

In this process, etching selectivities of 50-100 are achieved for various etching mask materials if during the etching action SiOx is continuously deposited on the etching mask through the addition of SiCl4 and O2, so that strictly speaking the etching mask consists of a base layer of the original mask material and a layer of SiOx on top of it.