Übersetzung für "Thin film transistor" in Deutsch

The silicon body 15 represents the internal substrate of the thin-film transistor.

Upon activation of the thin-film transistor, a conductor channel is formed in the polysilicon body 15.

Each pixel unit includes a thin film transistor.

The planar MOS transistor serves for the writing of items of information and the thin-film transistor serves to read out items of information.

An electrically non-linear element, for example a thin-film transistor, is integrated into each pixel of the active matrix substrate.

In the promising TFT (thin film transistor) displays, the electro-optical effect utilized is usually the TN effect.

The manufacture of the thin-film transistor or transistors occurs on the planar surface of the insulating layer 13.

The heart of the ProPlus X is an amazingly bright, low energy consump-tion, Thin-Film Transistor (TFT) display.

According to the invention, the combination instrument has a display, for example a thin-film transistor TFT- or LCD display.

The thin-film transistor includes a floating gate that is charged with a charge when items of information are written in.

An organic thin film transistor (OTFT) is a 3-terminal device and requires 4 materials:

A semiconductor switch, preferably a thin-film transistor, is associated with each one of these pixel electrodes and is disposed on the substrate provided with these pixel electrodes.

For example, the sensor elements 12 and 22 are connected to a segmented read line 91 which is connected to the common read line 82 of this column via an electronic switch 4 which may be a thin-film transistor like the electronic switches 2.

Each of the sensor elements shown in the Figure comprises an electric switch 2 which may be, for example a thin-film transistor.

There has recently been a particular interest in actively addressed liquid crystal indicators, e.g., TFT applications ("thin film transistor") in television sets.

The purity of the quartz glass i.e., having no more than one ppm of alkali elements and no more than 1 ppm of iron, nickel, copper, chromium and/or the transition metals, and optionally no more than one ppm of phosphorous, arsenic, antimony, bismuth, boron, gallium, indium and/or titanium, assures that in the further processing of the semiproduct to electronic semiconductor components, such as semiconductor memories (RAMs, DRAMs), microprocessors or transistors, (if the wafer of the semiconducting material consists of doped silicon,) or to opto-electronic components (such as, for example, TAFT-LCD's (thin film transistor liquid crystal displays), if the wafer of semiconductor material consists of doped silicon,) no substances undesirably affecting the electronic properties of the semiconductor material can enter the doped silicon by diffusion, for example.

For some years there has been a particular interest in actively addressed liquid crystal indicators, for example, TFT applications ("thin film transistor") in television sets.

For displays having a high density of information, actively controlled cells, for example TFT cells ("thin film transistor"), have recently become especially important in addition to the passively controlled, multiplexed cells.

The electrical connection between the thin-film transistor and the power MOSFET can occur, for example, at the edge via a via hole that is filled with tungsten and that is provided with an aluminum metallization.

In twisted nematic (“TN”) and thin film transistor (“TFT”)-TN-LCDs, the tilt angle defines the rotational and the tilt direction so that reverse twist and reverse tilt phenomena are inhibited.

A part thereof is occupied by a thin-film transistor as well as by signal leads and control leads; moreover, openings of a width of approximately 10 ?m exist between the pixels and leads for the purpose of insulation.