Translation of "High drain" in German

Appropriate floor drain with high drain performance (vertical and horizontal)

For example, all the control devices or individual control devices with a high power drain of a module can be monitored.

This voltage cannot be exceeded even in the event of very high drain-source voltage differences of the MOS cells of the active cell array.

The clutch member 13 formed as a flexible cable and provided at the coupling device 11, which can easily be fastened on the handle bar 5 of the shopping cart 1 by a clamping plate 18 fastened to the housing parts 14 and 15 by means of screws 19, must indeed be introduced by hand into the trap 12 of the adjacent cart, but due to the flexibility an offset in height can readily be compensated, also no vibrations that necessarily result as carts are coupled and uncoupled are transmitted to the electrical circuit elements, and protective resistances with high current drain causing high current consumption are therefore not required.

This leads to undesirably high delay times in the case of n+ -silicon conductors, and to high source/drain-series resistances which impair the function of short channel transistors.

Corresponding to the higher oil viscosity at low temperatures or low oil viscosity at high temperatures, the draining nozzles 53, 54 change their cross section in such a manner that at low temperatures large drain cross sections and at high temperatures small drain cross sections are adjusted.

Examples of clocked circuits with high pulsed current drain are control units, microprocessors, and digital signal processors for various applications.

This increases the tunnel punch-through voltage so that tunnel punch-through, or tunnel breakdown, is avoided even at relatively high drain voltages.

Due to the low p-- -doping of the well 3, a sufficiently large space charge zone can develop there, which is suitable for receiving high drain-to-source voltages that occur, for instance, in the depletion situation of the transistor.

It is an object of the invention to specify a simply constructed field-effect transistor which has a small area requirement, is suitable for switching voltages having a magnitude of greater than five volts or greater than nine volts and has outstanding short-channel properties, in particular a high drain current and a good blocking property.

Because the start-up cells supply a permanent charging current even when a high drain-source voltage of the active cell array is present, they must be both short-circuit-proof and thermostable.

However, the range depends on various factors: Low or high external temperatures drain the battery, as does the use of the radio or air-conditioning system.

The application of the optical assembly of the present invention allows for the first time using a high current drain infrared lamp while preserving a satisfactory service life.

In order to avoid damage to the drive unit due to overheating owing to a high power drain, such a drive unit is frequently protected by a thermoswitch.

Hereby, an improperly high current drain from the battery would also be avoided, which would occur in such a case of manipulation, as the charge current of the inductor in the disturbed operating conditions is limited by the already specified charge current threshold value.

One and two-transistor cells are known, which require high voltages at drain and gate for generating hot electrons and storing them in the memory transistor.

A high power drain from the rechargeable battery pack can also lead to an increase in temperature of the individual cells and of the electrical connections, as a result of which the position of the contact plate may change.

There have been various theoretical investigations spread over a long period of time concerning compensation devices (cf. U.S. Pat. No. 4,754,310 and U.S. Pat. No. 5,216,275) in which, however, specifically, improvements of the on-resistance RDS (on) but not of stability under current load, such as, in particular, robustness with regard to avalanche and short circuit in the high-current operation with high source-drain voltage, are sought.

There have been various theoretical investigations spread over a long period of time concerning compensation devices (cf. U.S. 4,754,310 and U.S. 5,216,275) in which, however, specifically, improvements of the on-resistance RDS(on) but not of stability under current load, such as, in particular, robustness with regard to avalanche and short circuit in the high-current operation with high source-drain voltage, are sought.

At a high source-drain voltage U 1Z, the secondary breakdown limit 46 typically firstly determines the maximum permissible current intensity I 1 (see FIG.

In particular, these high drain and gate voltages are the result of the effort to shorten the programming time which is why programming essentially takes place in the vicinity of the breakdown voltages.

In spite of that measure the on resistance R on is comparatively high due to the necessarily extremely low level of LDD doping in the proximity of the gate and simultaneous realisation of optimised HF-DMOS transistors together with DMOS transistors for very high drain breakdown voltages (>100 V) and a low on resistance R on is not possible as a consequence of the higher doping at the drain side of the LDD region which cannot be depleted.