Übersetzung für "Edge gate" in Deutsch

The dopant concentration at the edge of the gate electrode of the first-mentioned MOS transistor is reduced by means of counter-doping.

The gate topology has been further optimized, allowing to reduce high field strengths at the gate edge.

Anti-climb spikes in the form of a steel comb that may be mounted on the top edge of a gate leaf.

Here, too, the field plate structure reduces the peak of the electric field at the drain-side edge of the gate.

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The carrier structure of the first segment 16 thus extends exclusively along the edge of the gate opening (not shown) i.e. in an area which practically does not receive any direct impact in operation.

This is not opposed by the fact that, for instance, along the lower edge of gate wing 14 the two panels 20 and 36 are interconnected, for instance, by an elastic strip 68 whose purpose it is to avoid an erroneous folding of the two panels 20 and 36 but which would not withstand any greater impact stress.

The MOS transistor is preferably connected up during operation such that that edge of the gate electrode which has a lower dopant concentration adjoins the source/drain region which is connected up as drain.

Owing to the small distance between cathode tip and edge of the gate hole and the considerably larger distance to the anode for voltages of the same order of magnitude on both electrodes, it is essentially the gate voltage that determines the field strength prevailing for the field emission at the cathode.

The channel region 42 is indiffused until, in those regions of the emitter region 37 in which no fingers 38 are present, it projects laterally beyond the emitter region and extends to a point under the edge of the gate electrode 39 (FIG.

The gate electrode has a dopant profile such that the dopant concentration in the gate electrode is lower at at least one edge of the gate electrode than in the center of the gate electrode.

If the MOS transistor in turned ON, the edge of the gate electrode is driven to accumulation on account of the potential ratio.

It is within the contemplation of the present invention to provide a lower dopant concentration at more than one edge of the gate electrode.

For various reasons, the drain region may not be doped as far as the gate edge, which results in a smaller overlap region during the subsequent diffusion.

In the course of oxidations which follow during production, a thicker oxide layer, a so-called bird's beak, is formed on the gate edge, as a result of which the tunneling current density is exponentially reduced.

The dopant concentration greatly decreases in the lateral direction, with the result that efficient tunneling of the charge carriers can only take place at the gate edge.

Since the gate of a power MOS transistor is situated at the terminal of PQ, the driver is dimensioned in such a way that it can drive the capacitive load present due to the gate as effectively as possible and continues to maintain the low or high state after the end of the edge, until a state change takes place from the inputs MOSH, MOSL, since current must also be driven outside the gate edge via parasitic capacitances at the gate to the drain particularly in the event of an inductive load.