Translation of "Electron gas" in German

Thus the nanocrystals have a zero-dimensional electron gas with wide gaps between the energy levels.

The uniform electron gas is of particular physical significance in this context.

GaN power transistors today conduct currents using a two-dimensional electron gas.

The cold plasma (blue) shows an absorption peak at the plasma frequency of the cold electron gas.

Often we compare these electrons with a gas, which is called electron gas.

That limit case leads to the generation of plasma oscillations of a two-dimensional electron gas and thus a magnification of the mixer effect.

This electron gas is the reason for the metallic gloss and the missing transparency of metals.

The expansion and density of electron gas has been precisely determined for the first time by physicists from the University of Würzburg.

However, using sophisticated computer simulations, the Kiel physicists were able to precisely solve the complex equations that describe the electron gas.

A two-dimensional electron gas (2DEG) is a gas of electrons free to move in two dimensions, but tightly confined in the third.

The HFET may not only be configured, as described in the embodiment, as a field effect transistor doped on only one side, instead an HFET that is doped on both sides can also be employed, that is, a highly doped layer is disposed above and below the channel layer carrying the two-dimensional electron gas.

In addition, it is required that a pigmentation for phosphor coatings is stable in a vacuum, that electron bombardment or gas discharges do not cause degradation of said pigmentation, that the pigmentation is inert with respect to reducing, oxidizing or hydrolyzing reagents and does not decompose at an increased temperature.

The doping is also selected such that a two-dimensional electron gas forms in the transistor in the channel layer 2, this being indicated in FIG. 1 by the broken line 7.

In this case, suitable electrical circuitry is used to build up field strengths between the two conductive layers which are such that there is a cumulative multiplication of the primary electrons, so that the films form a “gas electron multiplier” (GEM).

Collective excitations (electron density waves) of an electron gas of a metal or a semiconductor at an interface of metal/dielectric and/or semiconductor/dielectric are designated as surface plasmons.

This applies at least to the area in which the electron gas can be considered as free in lateral expansion.

Many different types of electromagnetic waves may form in such media because of different characteristics of the electron gas and ion gas as well as the following acceleration-effective processes:

Different electromagnetic waves can be formed in such media because of the different properties of electron gas and ion gas, as well as because of the following acceleration properties:

This is not possible in the zero-dimensional electron gas of the nanocrystallites because of the large energy gaps>27 meV, which are particularly large in the range of the low excitation states.

In the latter case, high positive charges must be present on the junction to ensure that a highly conductive inversion layer (electron gas) is generated close under the top surface.

They are resistant to electron radiation and gas discharges, and they exhibit a very low vapor pressure, a sufficient temperature resistance up to 700° C. and they are not toxic.

As a further advantage is added that the "electron gas" can be "encarcertated" with extremely small voltage differences and deflected cleanly onto the respectively addressed line.

In an analogous manner to the electron gas in a metallic conductor, in which the mobility of the electrons reduces with temperature, and the electrical resistance increases, the flow resistance of the air flow in an HVAC (Heating, Ventilation and Air Conditioning) system also rises with the gas temperature.