Übersetzung für "Parasitic current" in Deutsch

In addition, a relatively high parasitic read current is permissible for the non-selected storage cells.

The parasitic-current indicator of the invention can be manufactured easily and at low cost.

This allows parasitic flows of current to be reduced.

Such complementarily directed current sources reduce parasitic flows of current to a considerable extent.

However, such discrepancies are acceptable so long as a certain degree of compensation for parasitic current losses is achieved.

The parasitic current can thus be simply and reliably kept below the permissible limit value.

The configuration of these parasitic current paths is additionally dependent on the bit pattern stored in the memory matrix.

Given constant emitter current of the lateral transistor, accordingly, the hole current in the base of the lateral transistor and, accordingly, the parasitic substrate current are reduced.

This type circuit is used when parasitic-current indicator K is to have high sensitivity.

The thin layer thickness of 0.04 ?m is particular has an advantageous effect on the parasitic current flow between emitter-base electrodes 5 or base-equipotential area electrodes 5, 9.

The horseshoe-shaped region likewise contributes to the fact that the charge carriers injected into the gatecathode circuit cannot follow a parasitic current path between the gate region and the anode region of the other thyristor structure of the same main surface.

A parasitic current from the anode (A) is prevented by the n+ -type emitter layer (2).

However, there is a technologically necessary parasitic diode that allows a parasitic or stray current to flow, which is why the polarity must be taken into account in the interconnection configuration.

However, during that programming, a problem arises which can be attributed to the parasitic current loss through the network formed from the resistors Rij.

The connection of gate electrode 15d with the emitter terminal, furthermore, ensures that a parasitic current is prevented between the emitter region and the collector region on account of a conductive field-effect transistor.

Thereby, an undesired or parasitic current flow in areas outside the intermediate space between the jaw members can be reduced or stopped.

The principle on which the invention is based is thus to reduce the interference by short-circuiting parasitic interference current paths within the power semiconductor array.

It is of course also possible for the connection of the voltmeter 20 to the voltage regulator 19 to be electrically isolated, e.g. by optical data transmission, wherein a parasitic current through the ionization amplifier no longer occurs.

In practice, in the stable, adjusted state of the air ratio, such a ratio of the parasitic current to the ionization current of less than 0.1% is achievable.

This memory element has high resistance, both in state 0 and in state 1, so that the element acts as a high-resistance resistor in each parasitic current path.

The further capacitance that is provided according to the invention can reliably suppress the influence of non-addressed memory elements only if the further capacitance is high as compared to the overall capacitance of all parasitic current paths through non-addressed memory elements.

All parasitic current paths that are possible between a particular word line and a particular bit line are connected in parallel, so that the capacitances thereof add up.

The disadvantage is that, in addition to the direct current path through the respective addressed memory cell, parasitic current paths form through further memory cells in a memory matrix comprising many of these memory cells.