Übersetzung für "Carrier holes" in Deutsch

According to a preferred realization the bristle carrier has through holes and projections projecting inwards therein, whereby the projections can be constructed as individual or circularly closed noses, as crossbars or as a constriction of the through hole.

Because the minority carrier (holes) have a diffusion length in the described material of about 4 microns and this intermediate region between depletion region boundry 21 and interface 18 is about 6 microns significant recombination occurs for the minority carrier move through this region only by diffusion.

It is known from DE 36 37 750 A1 to form in the bristle carrier blind holes and to heat the plastics material surrounding the blind holes until it becomes flowable.

The required electric terminals of the bimetal thermoswitch could be secured on the carrier in that holes are drilled into the carrier, e.g., by means of a laser beam, and the terminals are screwed or riveted to the carrier at the resulting drilled holes.

The latter process and also thermal processes generally lead to a completely satisfactory product from the use standpoint, because the bristle carrier has no holes, or at least no open holes and the bristle bundles terminate cleanly with the bristle carrier side, so that such bristle articles are in particular satisfactory hygienically.

In this embodiment, the recesses on the inside face of the workpiece carrier are holes which completely traverse the relevant workpiece walls.

Process according to claim 1, characterized in that the ends of the bristles are melted to such an extend that, following their introduction into the bristle carrier holes, melt remains on the outside of the bristle carrier, accompanied by the formation of a bead.

The molecules of the second and third matrix materials preferably transport only one charge carrier type, holes or electrons; thus, no excitons are formed on them.

To this end, the impeller wheel can have one or more holes in the rib carrier, in which holes a pin is seated which engages into a groove in the adjacent second rotor disk.

As a consequence, it is possible to precisely position and align the at least one semiconductor light source arrangement on the carrier since bore holes may be embodied with a high degree of precision.

The carrier 1 exhibits holes 4, which coincide with holes 5 in the insert 2 .

Another advantageous configuration of the invention, by which the marking process can be further reduced, calls for two holes to be arranged in an edge area of the carrier sheet, which holes are used for correct positioning of the carrier sheet in the treatment region of the marking device.

In the avalanche breakdown or reverse voltage breakdown, hot charge carriers (electrons and holes) are generated.

Workpiece carriers with holes or frames only must be checked in each individual case.

Then the positive charge carriers, i.e. holes, are injected from the anode into the adjoining layer.

However, an electrical current only flows when minority charge carriers (holes h+) are present.

For good performance data, good mobilities of the charge carriers in the hole-transport layers and good hole-injection properties are particularly crucial.

From this anode in turn, positive charge carriers, so-called holes, migrate in the direction of the cathode.

The dimension of the optimum length of the umpumped region of the semiconductor body of the laser adjacent to the respective mirror structure is, for example, limited to about three diffusion lengths of the charge carriers, particularly the holes, in the unpumped regions of the active zone.

As a result the internal stresses are at least partly retained and are used as clamping forces for the bristles in the bristle carrier hole.

A thin film solar cell is proposed, in which the surface of the semiconductor layer (20) facing the front contact (28) is designed as an inversion layer, which can be tunnelled through by the charge carriers electrons and holes.

This current consists essentially of minority charge carriers, i.e. holes, injected into layer 1 from layer 12.

In contrast therewith, in a further embodiment of the invention for trapping positive charge carriers (holes) the hole trapping layer contains selenium with a sodium or hydrogen doping of less 2000 ppm.

In the present case of an n-channel MOSFET, there is flooding in the inner zone 2 with positive charge carriers (holes) and negative charge carriers (electrons).

This gives a modified profile in respect of the energy band between the lower limit of the conduction band and the upper limit of the valence band of the correspondingly N-doped silicon atoms between the spaced regions of the outer layer (see FIG. 5) so that here—assisted by the potential produced thereby between the spaced regions—the minority carriers (holes) existing in that region are pushed downwardly and thus no or only a slight degree of recombination of electrons and holes can occur.

All that is essential here is that the configuration of the shaded source zone regions 9' inside the source zones 9 in the edge region RB of the cell array prevents a reverse flow I1 of charge carriers, of holes in the present case, from inadvertently switching on the pn diode D1, and thus prevents the inadvertent switching on of the parasitic bipolar transistor T1 formed from the source zone 9, base zone 8 and inner zone 2.

For the case that, contrary to the present example, a negative voltage is applied to the bias electrode so that negative charge carriers (electrons) migrate to the collecting electrode during X-ray exposure, the layers exhibiting suitable conductivity for positive charge carriers (holes) and poor conductivity for electrons are to be interchanged, and vice versa.

On the layer 32 there is provided a semiconductor layer 33 which is doped, so that it does not conduct positive charge carriers, i.e. holes, but conducts the negative charge carriers (electrons) so much the better.

The majority charge carriers, i.e., holes in the p-doped silicon body (6), diffuse towards the ohmic contacts (10).