Übersetzung für "Abrupt junction" in Deutsch

The tunnel regions 28 are preferably arranged in the region of an abrupt junction 24 of the refractive index profile.

The upper area, which has low-doped p Si or p poly-Si 9, represents an graduated p-n junction, together with n-type epilayer 2, while the lower area of trenches 6, which has highly doped p + Si or p + poly-Si 8 represents an abrupt p-n junction, together with n-type epilayer 2 .

The upper area of trenches 6, which has highly doped p + Si or p + poly-Si 8, represents an abrupt p-n junction, together with n-type epilayer 2, while the lower area, which has low-doped p Si or p poly-Si 9, represents a graduated p-n junction, together with n-type epilayer 2 .

If the doping concentration of the n-type epilayer is to be designed according to the breakdown voltage requirement, the n-type epilayer must be low-doped in the presence of an abrupt p-n junction.

The graduated p-n junction in the lower area of the trenches may be used to achieve a higher breakdown voltage and/or a lower forward voltage, while the abrupt p-n junction in the upper area of the trenches ensure an adequate shielding action of the barrier-lowering effect and thus a low leakage current.

The abrupt p-n junction in the lower area of the trenches makes it possible to achieve a good shielding action of the barrier-lowering effect and thereby provide a low leakage current.

Due to graduated p-n junction in the upper area of the trenches, the forward voltage increases to a lesser degree than would be the case using an entirely abrupt p-n junction.

From the standpoint of the active region, the refractive index profile thus decreases, preferably continuously, on each side of the respective abrupt junction.

Between these sub-regions there is formed in each case an abrupt junction 24, in which the refractive index jumps from a smaller value to a greater value.

On each side of the abrupt junction 24 the refractive index decreases in each case as the distance from the active region 21 increases.

The tunnel regions 28 are in each case preferably arranged in a node of this optical mode, which may be formed as described above in the region of the abrupt junction 24 .

An abrupt junction 24 is formed in each case between the semiconductor body 2 and the edge layers 6, at which junction the refractive index increases abruptly from the standpoint of the interior of the semiconductor body 2 .

The abrupt junction 24 is thus formed at an interface between the semiconductor body 2 and a layer adjoining it.

At the abrupt junction 24 which arises between the sub-region 221 and the further sub-region 222, the aluminum content decreases abruptly from 35% to 20%.

The abrupt hetero junction requires consistent treatment of the carrier concentration and carrier temperature at the interface point, each of them being represented by two distinct values describing the two sides of the interface.

Furthermore, for the boundary walls which serve as inner and outer containers, such manufacturing techniques result in the problem that, owing to the abrupt junctions which result when the individual elements are joined together, the welding procedure cannot be carried out continuously over the corner region of the components to be connected.

A further reduction in the breakdown voltage with abrupt pn junctions can be achieved by means of the voltage limiting zones Z shown in FIG. 2 which have at least one area with a substantially circular curvature.

In particular, one of the abrupt junctions may be arranged between the active region and the further active region.

The field-shaping layers 22 each include two abrupt junctions 24, which are formed between the sub-region 221 and the further sub-region 222 or between the further sub-region 222 and the additional sub-region 223 .

By means of the refractive index profile described, which on each side of the active region 21 in each case includes two abrupt junctions 24, at which the refractive index increases abruptly in each case from the standpoint of the active region, an intensity distribution of the near field may form between the cladding layers 26 in the field-shaping layers 22 in such a way that at a predetermined distance the far field radiation emitted by the active region 21 approaches the radiation pattern of ideal homogeneity.

Such a gradual transition frequently occurs unintentionally in fabricating layer structures, because hitherto abrupt, i.e. atomic, junctions are only possible with few layers.

The refractive index profile illustrated in FIG. 4A in each case includes two abrupt junctions 24 on each side of the active region 21, at which the refractive index increases abruptly from the standpoint of the active region.

A clear influence of the radius of curvature R on the breakdown voltage with abrupt pn junctions is given when the condition R?W is met, i.e. when the radius of curvature is less than or at most equal to the width W of the space-charge region during breakdown.