Übersetzung für "Hydrogenous" in Deutsch

In particular, the invention provides for deposition of hydrogenous and doped surface layers on large-area silicon substrates.

If appropriate, the catalyst is subsequently activated with a hydrogenous gas.

Hydrogenous 3C—SiC layers, which may also be nanocrystalline, are also known.

After the regeneration, the catalyst is, if appropriate, reduced with a hydrogenous gas.

After the regeneration, the catalyst is reduced with a hydrogenous gas if appropriate.

After the regeneration, the catalyst is optionally reduced with a hydrogenous gas.

A catalyst in the reformer converts liquid gas into a hydrogenous gas.

Molecular hydrogen as a raw material is not naturally available but must be extracted from hydrogenous raw materials.

The semiconductor base material according to the invention, that is the amorphous, hydrogenous carbon, is manufactured through high-frequency plasma deposition of gaseous hydrocarbons.

Amorphous, hydrogenous silicon (a-Si:H) is also known as a semiconductor base material.

The grain is heated by the heat of reaction during combustion of the hydrogenous component of the burner gas.

Suitable as the hydrogenous component are for example hydrogen or hydrocarbon compounds such as propane or acetylene.

As a result of the tungsten doping in the hydrogenous surface coating, hydrogen is additionally activated for volume passivation and surface passivation.

The hydrogen can be fed to the anode gas chamber either as pure hydrogen or as a hydrogenous fuel gas.

In multistage reactors, this applies to every intermediate feed of oxygenous and any hydrogenous gas.

A method for manufacturing a semiconductor base material with high semiconductor characteristic potential comprising the step of depositing a thin layer amorphous, hydrogenous carbon (a-C:H) onto a substrate by high-frequency plasma deposition of gaseous hydrocarbons, wherein the average retention time of the hydrocarbons in the plasma is at least 15 ms, the retention time being defined as the quotient of the product of the plasma volumes and gas pressure and of the mass flow rate, wherein the power density in the plasma is from 0.2 to 10 W·cm-3, and wherein the substrate is not heated.

On the other hand, from the "IDR-Industrie Diamanten Rudschau" [Industrial Diamond Magazine], volume 18 (1984), No. 4, pages 249 ff. it is known that amorphous, hydrogenous carbon (a-C:H), which has a relatively high hydrogen contents of 13 to 38 atomic percentage, possesses a specific electrical resistance of 1013 ?·cm and an optical energy gap of 0.8 to 1.8 eV.

This may then be followed by an oxidation step, in which the material of the block 4 is exposed to air or oxygen, and conditioning in a hydrogenous atmosphere.

As the reaction partner for the combustion of the hydrogenous component may be used for example oxygen, oxygen compounds, halogens and halogen compounds.

To improve the radiation resistance of the quartz glass through the damage-healing effects of hydrogen, EP-A1 401 845 recommends a subsequent loading of the tempered quartz glass blank with hydrogen by treating it at increased temperature in a hydrogenous atmosphere.

Method according to claim 1, wherein hydrogenous SiN x O y layer has a thickness determined by at least one coating selected from the group consisting of pressure, metal temperature, gas composition, oxygen partial pressure, substrate temperature, distance between dopant and substrate, and dopant geometry.

Method according to claim 1, wherein the hydrogenous SiN x O y layer is formed in a cyclic coating operation on the substrate.

In accordance with the invention, a hydrogenous SiN x O y layer is selected that releases hydrogen during growth and tempering.

For example, during the manufacture of EFG solar cells with hydrogenous SiN x O y surface layers, a surprising correlation was found of the solar cell efficiency (Eta) with the content of tungsten as a dopant in the SiN x O y layer.

With substrate-independent coating methods such as remote microwave plasma or LPCVD technology, doped hydrogenous layers can in principle be deposited onto all types of substrate.

The process as claimed In claim 1, wherein step 3 further comprises hydrogenolysis in a hydrogenous atmosphere in the presence of a transition metal catalyst under a pressure of from 0.5 to 400 bar.