Übersetzung für "Durchlasswiderstand" in Englisch

In DC/DC converter applications, the low on-state resistance reduces conduction losses at high loads.

Moreover, this comes without negative effects on the on-state resistance RDS(on) .

In the presently contemplated embodiment, both driver modules preferably comprise semiconductor components having a low on-state resistance.

In such FET's, the higher the forward resistance in the switched-on state, the higher the maximum blocking voltage for which the FET is constructed.

In the case of asymmetrical structures with constant doping of the higher-resistance layer, this leads to components with very large thickness and correspondingly high on-state resistance.

It follows that the forward resistance Ron for maximum blocking voltages above about 300 V is higher than in the case of bipolar transistors constructed for the same blocking voltage.

Owing to the large number of IGBT unit cells, such mixed components are free of filament formation (which does not occur in the IGBT), but have, on the other hand, a substantially lower on-state resistance than a pure IGBT owing to the MCT unit cells.

It should be noted at this point that the limiting resistor R V may be dispensed with or be considered as being included in the diode when the forward resistance of diode D V has a value that is high enough for the respective one of the current limitation wanted.

The result of this is that, in the switched-off state, the transistors T 1 and T 2 have particularly low parasitic capacitances with respect to reference-ground potential GND and, with the transistors switched on, the forward resistance or series resistance of the third transistor T 3 is particularly low.

Another advantage consists in the fact that the risk of fracture is reduced because of the lack of large-area removal of the semiconductor substrate and for this reason thinner base material can be used which, at the same time, has a favorable effect on the conduction resistance (RON).

For the dimensioning and design of such a thyristor structure this means that, in the conducting state, as low a conducting-state resistance (ON resistance) as possible is desirable in order to limit the drop in power across the component at maximum current flow.

In this way, the channel in the cathode finger 14 is short-circuited or the current-carrying part of the channel is considerably shortened, as a result of which a lower resistance is produced.

The voltage U L at the inductive component—on the assumption of ideal electronic switches with a pass resistance near 0 and an ideal inductive component that has no ohmic internal resistance—can be ascertained simply from the voltage or voltages of those cells from which the energy is withdrawn.

The reduced driver resistance (RDSon) of the MLX90297, in combination with the built-in current limiting, allows application of this fan driver to fans with coil resistances substantially lower than 10Ohm.

With the IPLU300N04S4-R7 of Infineon, 40 V MOSFETs of the latest generation of TO-leadless packages are applied which have been designed particularly for lowest on-state resistance (84 µOhm), highest ampacity (300 A DC) and best cooling (0.35 K/W).

TE's DS13 series SSRs employ state of the art photovoltaic optical isolation and power MOSFET output chips for ultra-reliable high speed switching of DC loads up to 2 amps, with low on-resistance.

On the basis of the throttles 24, 32 the result is a greater damping in the first position, since the larger volume flows of the rod chamber 14 and the piston chamber 12 are conducted in each case through only a single through-put resistance (the throttles 32, or 24), while the comparatively small volume flow flows in the second position of the valve arrangement 34 through two through-put resistances (throttles 24, 32) into the accumulators 26, 30 .

Moreover the OptiMOS FD offers up to 45 percent on-state resistance (RDS(on)) as well as up to 65 percent Figure of Merit (FOM) reduction compared to alternative devices leading to highest efficiency and power density.

The exceptionally low on-state resistance and low gate charge allow designers to significantly reduce the conduction and switching losses of power supplies. For example, capacitive losses at 400V can be reduced by 25 percent.

This new product family combines the state-of-the-art on-state resistance (RDS(on)) of a trench MOSFET with the wide Safe Operating Area of a planar MOSFET.

In the context of the disclosure it was recognized that it is useful if no other switch 3, 9 is closed or has its conducting-state DC resistance increased if the measured current through all the consumers 4, 10 lies above a specified value I max1, since this would aggravate the situation.

In the same way, it is not useful for one of the switches 3, 9 to be opened or have its conducting-state DC resistance increased if the measured current through all the consumers 4, 10 lies below a specified value I min1 .

The device also has a controller 6 that opens or closes one of the switches 3, or changes its conducting-state DC resistance, on the basis of at least one of the previously determined values.

The device typically has a controller 6 that typically opens or closes one of the switches 3, or changes its conducting-state DC resistance, on the basis of at least one of the previously determined values.