Übersetzung für "Ätzflüssigkeit" in Englisch

Where appropriate, another etching liquid must be used for etching dentine.

For that reason, also a laminar flow of the etching fluid is advantageous.

The etchant is, for example, hydrofluoric acid HF.

The raw glass fiber stump is then dipped into an etchant.

The etchant is preferably hydrofluoric acid.

The etchant preferably has a concentration of approximately 20%.

In the most simple case, the composite film can be dipped entirely into the etching liquid.

In addition, there are significant health risks due to the nature of the etching liquid.

It is important that no etching liquid should remain in the desiliconized zone after the etching.

It is important that no etching liquid should remain in the desiliconized zone after the etching.

The erosion rate of the etchant is different for the optical fiber core 2 and the optical fiber cladding 3 .

The etchant is selected such that the erosion rate increases toward the center of the optical fiber core 2 .

The method of claim 17, in which the etchant is hydrofluoric acid HF.

By immersion of circuit boards into the etching fluid, its physical and chemical composition changes.

In this case, the etching fluid leaves the nozzle above the center of the semiconductor disk.

Caustic soda may be used for the etching, so that the etching liquid is formed of caustic soda.

By dipping the pretreated band into an etching fluid, the perforations are chemically dissolved out of the band.

For optimum adjustment of the chemical and physical constitution of the liquid, flow-independent measuring and adjusting of the liquid is achieved by a sensor which is arranged in a by-pass to the cycle line of the etching fluid between the etching tank and the electrolytic cell.

Development in toluene-acetone (9:1 by volume) afforded an image that withstood etching in an etching fluid (a 41% aqueous solution of ferric chloride).

After etching the base 1a to form the frame 1 with the window or opening 8, a selective acting etching liquid, for example, copper chloride is used to etch the nickel layer 2 to form a window 9 in the layer 2 as illustrated in FIG. 5.

After treating the surfaces of the measuring probes by means of etching, the measuring probes were removed from the etching liquid and cleaned five times with de-ionized water, rinsed, and dried.

Under these conditions, however, the danger of mechanical damage to the wafers, of contamination by the material of the spacing disks or of the etching basket, or of a nonuniform application of the etching liquid if the spacing disks rest directly on the wafer surface of the wafer to be processed, is appreciably increased at the same time.

The known supports make it possible to treat wafer-like objects on their surfaces that face away from the support, whereby the surface facing toward the support is not treated since the treatment medium (e.g., the etching fluid) is prevented from reaching the underside of the support by the gas (primarily nitrogen) that emerges from the tubular die and flows radially outward between the wafer-like object and the surface of the support that faces toward said object.

Owing to the step, especially a round one, that is provided in the surface facing the wafer-like object, that is arranged outside of the tubular die through which the nitrogen gas emerges, and that acts as a tear-away edge, treatment medium (treatment fluid, etching fluid, flushing fluid) moves around the outer edge of the wafer-like object on its underside (that is, the side facing the support) and treats, e.g., etches or flushes, the wafer-like object essentially in a ring-shaped area that is located outside the shoulders on its underside.

A treatment medium 15, e.g., an etching fluid, which is applied to the top side (the side facing away from support 1) of wafer-like object 2 is not, as occurs in the case of known supports, largely or completely blown away from circumferential edge 16 of wafer-like object 2 by the gas that emerges from tubular die 8 and flows out between wafer-like object 2 and support 1, so that said medium cannot reach the underside of said object.

It is advantageous here that the process as claimed in the invention is very simple to execute, since the etching liquid need simply be poured in a continuous flow onto the surface of the rotating semiconductor substrate (wafer).