Translation of "Stapelfehler" in English

The arrows indicate stacking faults and twin boundaries.

The latter allow to conclude on defects, in particular stacking-faults in the basal plane.

The number of stacking errors can also be reduced by means of the bonding.

The single-grain data indicated that stacking faults appear as precursors to the martensite.

Stacking faults can be visualized as a shift in the neatly arranged layers of atoms.

Stacking errors can also be a cause of the problem, together with old or damaged equipment.

The number of stacking faults in the thick n?-layers can also be reduced by means of the bonding.

As a result, crystal faults form in the epitaxy layer (for instance due to stacking faults).

The rough interface zone with its islands represents nuclei for the formation of lattice defects, particularly stacking faults and dislocation loops, during subsequent recrystallization.

Stacking faults may be made visible after the oxidation of the discs by secco-etching (2 parts by vol. of 40% aqueous hydrofluoric acid and 1 vol. part of 0.15 molar, aqueous potassium bichromate solution) and they can then be counted under the microscope.

The whirling grains are moved steadily along the surface of the rows of semiconductor discs in the processing tray 5 where they may, depending on the size of the grains, produce a large number of very fine scratches, in the range clearly below 1 ?m and most of the time about 0.1 ?m. This fluidized bed treatment causes, by the subsequent oxidation in the manufacture of the structural elements, the inducement of stacking faults, which have an exceedingly strong gettering effect on point defects of all kinds.

The stacking faults on the rear side of the discs are very stable and do not lose their effectiveness even after numerous oxidation steps within the indicated temperature range.

The lengths of the stacking faults were obviously reduced by the chlorine admixture to 4-6 ?m, but in this case as well, point defect removal was complete.

In addition, when the back of the semiconductor wafer is damaged by the action of force which is virtually undefined in relation to its magnitude and its direction, it is unavoidable that the induced stacking faults are inhomogeneously distributed and electronic components fail because the action of the getter effect in their environment is inadequate.

It is an object of the present invention to provide a damage method in which the induced stacking faults are homogeneously distributed and in which a roughening of the back of the semiconductor wafer results in preventing the generation of undesirable particles.

The induced stacking faults, which are homogeneously distributed, only become visible after a test oxidation and the incipient etching of the back.

During this drawing-back of the recording medium, however, the oblique setting of the outer pressure rollers now leads to the recording medium being pushed together between the pressure rollers, which can cause faulty stacking at the next start-up of printing.

To produce tapes of satisfactory quality and hence electrical properties, it is essential to achieve as low as possible a concentration of crystal faults, such as grain boundaries, stacking faults, dislocations and point defects.

In order that such stacking defects cannot lead to any hindrance to the collecting device and therefore the newly formed stacks are as free of defects as possible, the objects picked up and to be set down are aligned in such a way that their boundary surfaces in each case lie in the same plane.

A crystal structure can fold at a stacking fault, causing the crystal layers to stack up in exactly the opposite order starting at the shift.

Since, however, as described above, foreign substrates have to be used as a start material, the problem arises just in these cases, that stacking-faults, etc. may occur.

A crystal structure can shear at such a stacking fault, whereby the crystal planes are stacked in exactly the reverse order starting at the dislocation.

In this case, it can be possible for the volume structure of the first encapsulation layer to have, for example, structural and/or lattice defects 163 such as, for example, dislocations, grain boundaries and/or stacking faults.

On the other hand, it is being stressed as negative and problematic that the deposition of SiN x directly on or in the vicinity of the AlN nucleation layer produced strongly compressively stressed GaN layers and led to layer deformity—so-called stacking faults, which were visible in the transmission electron microscope and which were further accompanied by a broadening of the D 0 X line width and the X-ray peaks. Therefore, for avoiding such problems, a second SiN x mask was deposited after 1.5 ?m for the screening of the defects.

The number of stack errors in the thick n ? layers may also be reduced with the aid of the bonding.

It has been found that the aforementioned processes lead to polysilicon which avoids spattering effects in the course of crystal pulling owing to the low chlorine content, but causes some stacking faults.

For if at least a portion of the epitaxial growth were to begin on the silicon between the lattice webs during the relocation, this might cause crystal faults, which would propagate in the membrane layer, for example as stack faults.

Occurs when the order of the crystal layers is reversed at a stacking fault – for example from ABC to CBA.

Here the range covers from point defects (vacancies, interstitials = atoms on interstitial sites) over line defects (dislocation lines of different dislocation types) up to area defects (plastic shear, stacking faults, microcracks)

The geometric dimensions can be chosen at its discretion, but with tiles 30x30 cm, 45x45 cm or 33,3h33,3 see the work will move faster and the possible stacking faults are not as noticeable.