Translation of "Gitterfehler" in English

These kinds of lattice defects can impair the efficiency of solar cells or semiconductor lasers.

In materials science, a dislocation is a crystallographic defect, or irregularity, within a crystal structure.

However, crystals pulled from the melt do not have the ideal stoichiometric composition, but rather have lattice imperfections.

In this case, the thin-film encapsulation 154 can have lattice defects 163 (in this respect, also see FIG. 19).

Specific electrical resistance is a physical magnitude which, among other things, reacts with extreme sensitivity to lattice imperfections, contaminants and structural changes.

During hot working of steels, the hardening resulting from multiplication of lattice defects (dislocations, stacking faults, etc..) fairly rapidly finds itself in competition with an initial mechanical softening mechanism, i.e. dynamic recovery.

On the one hand, these lattice defects bring about a disturbing reduction in the mechanical stability of the membrane 1 and, on the other hand, cause a disturbing scatter refraction of the visible light, whereby the above-mentioned economical optical alignment procedure is impeded or even rendered impossible.

In high-speed foil casting processes it is important to ensure that no intrinsic lattice defects are developed during the crystallization process.

It is advantageous here if the lattice defects preferably occur in the grain boundaries and the columnar crystal grains themselves are as defect-free and single crystalline as possible.

In certain embodiments of the invention, the ion bombardment or implantation step can be coupled with a substrate cooling step, wherein the substrate is cooled preferably to a temperature below about -90° C., when metals or alloys are utilized whose lattice imperfections are easily cured (for example, aluminum, copper, molybdenum, gold, nickel, etc).

In addition, the high boron doping of the silicon layer has the disadvantageous effect of producing lattice errors on the border layer to the substrate and in the subsequent semiconductor layers.

The formation of these lattice faults is substantially influenced by the process of solidification, i.e. the speed and direction of the boundary surface between the solid and liquid phase.

A disclination is a line defect in which rotational symmetry is violated.

He was one of the first scientists to use the new electron spin resonance technology on glasses and transferred this lattice defect approach from solid-state physics over to the amorphous and glassy state.

These lattice defects accumulate with use, and reduce the photon conversion efficiency of the chip, so reducing light output.

Furthermore, the volume structure of the first encapsulation layer 161 has structural or lattice defects 163, such as pores or dislocations, for instance, which are indicated merely schematically and purely by way of example.

In this case, the structural and lattice defects 163 can extend—as shown—as far as the top side 161 a of the first encapsulation layer 161, that is to say as far as the interface between the first 161 and the second encapsulation layer 162 .

The second encapsulation layer 162 is embodied in such a way that structural and lattice defects 163 of this type have no influence on the volume structure of the second encapsulation layer 162 .

The result is lattice imperfections.

Said lattice defects 163 can result, for example, in so-called pinholes or other imperfections which lead to a permeability of the thin-film encapsulation 154 to atmospheric gases or moisture.

In this case, it can be possible for the volume structure of the first encapsulation layer to have, for example, structural and/or lattice defects 163 such as, for example, dislocations, grain boundaries and/or stacking faults.

In particular both the abovementioned structural and lattice defects of the volume structure of the first encapsulation layer 161 and pores in the surface structure of the first encapsulation layer 161 can form undesirable permeation paths for moisture and/or oxygen, which can enable or at least facilitate diffusion through the first encapsulation layer.

In particular, it can be advantageous in this case that the amorphous second encapsulation layer 162 does not continue structural and/or lattice defects 163 of the first encapsulation layer 161, such that, as a result, no continuous permeation paths for moisture and/or oxygen through the encapsulation arrangement can form either.

For example, the stretching ability may be promoted by lattice defects in the crystal structure, where the crystal structure may shear in a deformation-inducing manner, the shear mechanism taking place at a mirror plane and producing regularly mirrored crystal regions (‘twins’).