Übersetzung für "Lackreste" in Englisch

After the lacquer residues have been skimmed off, the circulating water may be reused.

Use HV 697 Hydro cleaner to remove dried lacquer residue.

For the removal of dried up lacquer residues use Hydro cleaner HV 6917.

Remove dried lacquer residue using a sieve.

Remove dried-on lacquer residues with special thinner ZD 82.

Remnants of paint and cold paint stripper can be washed away easily using water.

The lacquer residue layers are removed thereafter either with organic solvents or mechanically, and a next layer is then applied thereover.

The wafers thus treated were inspected when small resist residues were found on two of the wafers.

The ink-repellent surface reduces the washing intervals by as much as 99%, only varnish residues need to be removed.

Our anilox cleaning method removes all traces of ink and varnish, without damaging the micro-structured surface.

Leave the gel for several minutes to allow the ink and varnish deposits to soften.

Loose paint residue still attached and residual cold paint stripper can be rinsed off with water in a separate basin / immersion tank.

Remove signs of weathering and old paint

Any resist residues still remaining on the substrate after the lift-off step can be readily removed in an oxygen plasma.

Such deactivation reactions play a particularly important part in the period of storage between the exposure step and the usually heat-assisted subsequent step of the secondary reaction leading to the elimination of the acid-labile groups in that complete development is no longer possible: coating residues or residual layers are left behind on the wafer.

The third object of the fine disintegration step is to deform the plastic particles during the defibrating process in a manner that the adherent varnish rests flake.

The hollow bodies 1, only one of which is shown here for purposes of simplification, are pushed along on the blade-like tops 5 of the grid bars 4 in the direction of the arrow K, so that any adhering traces of lacquer on the rims of the hollow bodies are constantly scraped off, and thus there is always metallic contact between the edge of the opening 3 of the hollow body 1 and the grid bars 4.

After removal of the hydrochloric acid, the polycarbonate is washed with distilled water until neutral and the lacquer residues remaining behind are rinsed out.

After the polycarbonate has been filtered off, the polycondensate is dried at 120° C. and final traces of lacquer are removed by air separation in a stream of nitrogen.

When freshly stripped wafers are immersed in water, unremoved laquer residues form, together with precipitating stripper components and stripped photoresist components, an essentially insoluble covering on the semiconductor surface.

For removing these residues, the two wafers were treated in a plasma etch unit (marketed by LFE Corporation under the type name 301) at an oxygen pressure of about 1.333 mbar and an energy of 150 W for 10 minutes.

After removal of the sodium hydroxide solution, the polycarbonate is washed with 10% acetic acid and then with softened water until neutral and the lacquer residues remaining are rinsed out.

Returning the conveyor belt in this saturated solvent vapor prevents any drying out of the paint residues, which could not be removed from the conveyor belt by the cleaning brush 16 or in the rinse basin 14.

Varnish residue is then removed from the ITO surface through the use of an oxygen plasma (RT power: 500 W, gas slow: 30 sccm) for 20 s.